K8A60DA N-Channel Mosfet (Toshiba)

Switching Regulator Applications K8A60DA N-Channel Mosfet (Toshiba)

• Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Datasheet







K8A60DA pinout | K8A60DA mosfet