K10A60D N-Channel Mosfet (Toshiba)

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Datasheet









K10A60D N-Channel Mosfet datasheet | K10A60D N-Channel Mosfet pinout | K10A60D N-Channel Mosfet pin arrangement | K10A60D N-Channel Mosfet terminal arrangement | K10A60D N-Channel Mosfet schematic