FQPF 27P06 P-Channel Mosfet (Fairchild)

P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

• -17 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-8.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt capability
• 175°C Maximum Junction Temperature Rating

Datasheet







FQPF 27P06 P-Channel Mosfet datasheet | FQPF 27P06 P-Channel Mosfet pin out | FQPF 27P06 P-Channel Mosfet pin arrangement | FQPF 27P06 P-Channel Mosfet schematic