Monday, November 7, 2016

Fairchild 1516SB FDU6680 N-Channel Mosfet

Fairchild 1516SB FDU6680 500V N-Channel MOSFET


• 5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies and active power factor

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